The transient enhanced diffusion which occurred during the annealing of ion implantation damage was analyzed as a function of temperature; especially with regard to a marked enhancement which resulted at low temperatures. A non-equilibrium point defect model was used to investigate this behavior. A simulation was performed of published measurements on P diffusion after Si implantation to low doses. This revealed that the diffusivity enhancement could be as high as 10000 during the first few minutes of annealing at about 800C. However, at high temperatures the enhancement factor was less than 10 for a few seconds. The effect of this behavior was reflected by the dopant profile of a p-n-p bipolar transistor. It was found that the base Gummel number depended markedly upon the annealing conditions which were used just after P implantation.

B.Baccus: Solid-State Electronics, 1992, 35[8], 1045-9