The migration of radioactive P in polycrystalline material was studied at temperatures ranging from 566 to 980C. The diffusion profiles were determined by using anodic oxidation sectioning and radiotracer detection. The grain boundary diffusivities were obtained by using the LeClaire method. It was found that the results (table 72), assuming a boundary width of 5nm, were described by the expression:

D(cm2/s) = 0.0048 exp[-2.65(eV)/kT]

M.R.Murti, K.V.Reddy: Semiconductor Science and Technology, 1989, 4[8], 622-5

Table 72

Grain Boundary Diffusion of P in Polycrystalline Si