The in-diffusion and annealing kinetics of Pd were investigated by means of the deep-level transient spectroscopy of p+nn+ structures. The substitutional Pd concentration was monitored via measurements of the electrically active centers. A study of the in-diffusion process, at temperatures ranging from 880 to 1050C, showed that Pd diffused mainly via the so-called kick-out mechanism. Annealing was performed at 550C on wafers which were homogeneously supersaturated with Pd. A consequent decrease in the electrical activity of Pd in the bulk was observed. The experimental results suggested that, during annealing, the substitutional Pd changed its configuration via interactions with vacancies according to the dissociative reaction.

J.Vicente, L.Enríquez, E.Rubio, L.Bailón, J.Barbolla: Journal of the Electrochemical Society, 1993, 140[3], 868-70