Analytical expressions which permitted a direct determination of the equilibrium concentrations of self-interstitials and vacancies, on the basis of measured impurity diffusion profiles, were deduced from the equations for kick-out and Frank-Turnbull diffusion mechanisms. In order to deduce the equilibrium point-defect concentrations, it was necessary only to measure the diffusion profiles. As a test, the equilibrium vacancy concentration in Si was determined by means of Pt diffusion. A value of about 4.4 x 1013 /cm3 at 770C was deduced for the equilibrium vacancy concentration. The vacancy diffusion coefficient was estimated to be equal to 2.2 x 10-11cm2/s. The rate of generation of vacancies by internal sources appeared to be lower than 10-5/s at 770C.

H.Zimmermann, H.Ryssel: Physical Review B, 1991, 44[16], 9064-7