It was found that the study of Pt diffusion permitted the separate observation of Si self-interstitials and vacancies. The diffusion of Pt could be described by the kick-out mechanism at temperatures above about 900C. At temperatures below about 850C, the dissociative mechanism governed Pt diffusion. The use of numerical simulation furnished a consistent set of parameters which described the diffusion of Pt at temperatures ranging from 700 to 950C. The generation or recombination of self-interstitials and vacancies was ineffective; at least below 850C. The concentration of substitutional Pt was determined by the initial concentration of vacancies at temperatures below 850C. It was concluded that Pt diffusion experiments, when performed at temperatures below 850C, could be used to measure vacancy distributions in Si.

H.Zimmermann, H.Ryssel: Applied Physics A, 1992, 55[2], 121-34