The diffusion of Pt into n-type or p-type material was carried out at temperatures ranging from 850 to 1000C; for times ranging from 1 to 50h. Three deep levels which were associated with Pt were detected using deep-level transient spectroscopy. These were 2 acceptor levels at Ec - 0.23 and Ec - 0.52eV, and a donor level of Ev + 0.36eV. The Ec - 0.23 and Ev + 0.36eV levels were produced by Pt which occupied substitutional sites. The Ec - 0.52eV level was not characterized, but was probably associated with an interstitial Pt-O or other defect complex. Diffusion profiles of the substitutional Pt showed that Pt diffused into Si mainly via the so-called kick-out mechanism.

Y.K.Kwon, T.Ishikawa, H.Kuwano: Journal of Applied Physics, 1987, 61[3], 1055-8