The transient enhanced diffusion of shallow molecular beam epitaxially grown marker layers of Sb, resulting from deep MeV Si+ ion implantation to doses of about 1016/cm2, was measured. It was expected that the near-surface regions of these implanted samples would be vacancy-rich, and transient enhanced diffusion of Sb (a typical vacancy diffuser) was observed. The marked enhancements implied the existence of an appreciable vacancy supersaturation. Double implantation of high-dose MeV-implanted samples, followed by shallow (40keV) Si implantation and annealing, produced a greatly reduced number of {311} defects; as compared with the 40keV implantation of virgin material. This again was considered to be consistent with a vacancy-rich region near to the surface of MeV-implanted samples.

D.J.Eaglesham, T.E.Haynes, H.J.Gossmann, D.C.Jacobson, P.A.Stolk, J.M.Poate: Applied Physics Letters, 1997, 70[24], 3281-3