The oxidation-retarded diffusion of Sb during dry oxidation was investigated at temperatures of 1000 and 1100C. Float-zone [100]-type wafers with a pattern of Si3N4 and a free surface were used to obtain domains, on the same wafer, having normal intrinsic and retarded diffusion. In addition, numerical simulations were performed in order to determine quantitatively the degree of oxidation-retarded diffusion. The results were compared with published values. It was thought to be remarkable that the recombination of self-interstitials and vacancies at 1000C was sufficiently fast to cause a significant retardation in the diffusion of Sb after only 500min of oxidation.

E.Guerrero, W.Jüngling, H.Pötzl, U.Gösele, L.Mader, M.Grasserbauer, G.Stingeder: Journal of the Electrochemical Society, 1986, 133[10], 2181-5