Diffusion experiments were performed in the presence of lattice defects which had been produced by Si ion implantation. The effects of transient enhanced diffusion were studied by means of bevelling and staining measurements of implanted samples, and secondary ion mass spectroscopic determinations of dopant profiles. The annealing temperatures for doped implanted specimens ranged from 700 to 1100C and this treatment was performed using an electron beam. The low temperatures which were used permitted the kinetics of anomalous diffusion to be monitored. It was ascertained that the enhanced diffusion coefficient was almost constant during a period which decreased with increasing temperature. It then tended gradually to the equilibrium value. This trend agreed with that of lattice damage changes which were revealed by double crystal X-ray analyses of the rocking curves of implanted samples. The secondary ion mass spectroscopy profiles indicated that only a fraction of the dopant which was located at residual implantation damage was responsible for the anomalous diffusion.

R.Angelucci, F.Cembali, P.Negrini, M.Servidori, S.Solmi: Journal of the Electrochemical Society, 1987, 134[12], 3130-4