A new model was proposed, for the diffusion of impurities in amorphous Si, which took account of its structural and electronic properties. The model was based upon the many-body kinetic theory of thermally activated rate processes in solids. The low activation energies which were commonly observed, as well as their dependence upon the impurity concentration, were explained.

J.L.Khait, R.Brener, R.Beserman: Physical Review B, 1988, 38[9], 6107-12