The mechanisms of electrically active impurity diffusion in heavily doped material during rapid thermal annealing were considered. Monte Carlo computer simulations of impurity atom migration in the lattice were carried out with regard to collective phenomena. On the basis of a comparison with experimental data on the rapid thermal annealing of implanted Sb at temperatures ranging from 1000 to 1200C, conclusions were drawn concerning the nature of the interaction between impurity atoms and defects. Good agreement between calculated and experimental results was obtained by modifying the model with regard to the non-equilibrium vacancy distribution in the lattice.

S.A.Fedotov: Physica Status Solidi B, 1994, 186[2], 375-82