The effect of point defects upon dopant diffusion was considered. Their influence was analyzed by comparing experimental data with a simulation. The experiments concerned the oxidation-retarded diffusion of Sb in float-zone material at 1100C. The simulation was carried out by using a physical model without simplifying assumptions, and it was shown that such assumptions were not admissible. A reasonable set of parameters was deduced from the analysis. Since each parameter represented a physical effect, information about the importance of the bulk and surface recombination of point defects, and about the equilibrium concentration values and diffusion coefficients of diffusing species, could be obtained. It was found that the effect of the surface played a decisive role in the distribution of point defects.

T.Brabec, E.Guerrero, M.Budil, H.W.Poetzl: Zeitschrift für Physik B, 1987, 67[4], 415-20