Equations for oxidation-enhanced and oxidation-retarded diffusion, and for oxidation-induced stacking faults were solved simultaneously by using experimental results which had been obtained at 1100C. A simple relationship between the concentrations of self-interstitials and vacancies was assumed in order to obtain the solutions. It was concluded that the product of the concentrations of self-interstitials and vacancies was almost equal to the value at thermal equilibrium, and that the fractional component of the interstitialcy mechanism for Sb diffusion was smaller than 0.5. This showed that the growth of oxidation-induced stacking faults was caused mainly by vacancy undersaturation, and that oxidation-retarded diffusion of Sb occurred.

M.Yoshida, S.Matsumoto, Y.Ishikawa: Japanese Journal of Applied Physics, 1986, 25[7], 1031-5