A simple model was developed in order to explain the enhanced diffusion of Sb which had been implanted at high temperatures. It was found that the concentration profiles could be predicted by using a system of reaction-diffusion equations which described the diffusion and decay of the impurity-vacancy pairs which were created during implantation. Good agreement with experiment was obtained.

E.Antoncik: Radiation Effects and Defects in Solids, 1993, 127[1], 75-82