The physical origin of the diffusion enhancement which had often been observed at high dopant levels, during the annealing of dopant-implanted material, was considered. It was shown here that the experimental results could be accounted for in terms of a percolation model which had previously been developed for high-concentration P diffusion. A quantitative treatment was presented for the case of the diffusion of implanted Sb in heavily doped n-type Si.

D.Mathiot, J.C.Pfister: Journal of Applied Physics, 1989, 66[2], 970-2