The diffusion of donor elements in fine-grained and coarse-grained polycrystalline material was studied at temperatures ranging from 900 to 1150C (table 82). Tracers (125Sb) were used to determine the concentration/depth profiles via sectioning. By means of autoradiography, the lateral distribution of the radiotracers over the sample surface was revealed. The grain boundary diffusivity could be described by:

D (cm2/s) = 380 exp[-2.9(eV)/kT]

F.H.M.Spit, H.Bakker: Physica Status Solidi A, 1986, 97[1], 135-42

 

 

 

Table 82

Grain Boundary Diffusion of Sb in Si

 

T (C)

D (cm2/s)

1150

1.7 x 10-8

1100

5.9 x 10-9

1050

3.3 x 10-9

1000

1.1 x 10-9

930

1.6 x 10-10