The injection of interstitials during the annealing of non-amorphizing Si implants was monitored by using sharply defined B-doped marker layers that had been grown by means of reduced-pressure chemical vapor deposition. The enhancement of B diffusivity which was measured during the initial annealing stage (up to 15s, 700C) was at least an order of magnitude greater than the enhancement which occurred during subsequent annealing. It was concluded that the ultra-fast diffusion set a lower limit, on the Si interstitial diffusivities (700C), of 2 x 10-10cm2/s.

H.G.A.Huizing, C.C.G.Visser, N.E.B.Cowern, P.A.Stolk, R.C.M.De Kruif: Applied Physics Letters, 1996, 69[9], 1211-3