Published values of the diffusivity of the Si interstitial or interstitialcy range over several orders of magnitude indicate activation energies of between 1 and 4eV. A model was proposed for the effect of bulk trapping effects upon the interstitialcy diffusivity. This provided a consistent explanation for the observed discrepancies. It reconciled the effects of different materials (float-zone, Czochralski, and epitaxial) and processes (diffusion, gettering) upon the apparent value of the interstitialcy diffusivity. New experimental results which directly indicated substantial bulk effects in various types of Si supported the validity of the model.

P.B.Griffin, S.T.Ahn, W.A.Tiller, J.D.Plummer: Applied Physics Letters, 1987, 51[2], 115-7