The diffusion of Si on (001) surfaces was studied by using scanning tunnelling microscopy. An anisotropy of island shapes during epitaxial growth was attributed mainly to an anisotropic accommodation coefficient. The diffusional anisotropy was small. An ordered so-called diluted-dimer structure was detected at low coverages and temperatures.

Y.W.Mo, R.Kariotis, B.S.Swartzentruber, M.B.Webb, M.G.Lagally: Journal of Vacuum Science and Technology A, 1990, 8[1], 201-6