The diffusion of ion-implanted Sn in single crystals was studied, as a function of the P donor concentration, during rapid thermal annealing at 1000 or 1050C. Depth profiles were determined by using Rutherford back-scattering spectroscopy and Mossbauer techniques. When the extrinsic/intrinsic carrier concentration ratio was greater than 20, extremely large diffusion coefficients were found. The value of the diffusion coefficient was approximately proportional to the 4th power of the extrinsic/intrinsic carrier concentration ratio. The onset of such a dependence was associated with the appearance of a new defect complex which contained Sn.

P.E.Andersen, A.N.Larsen, P.Tidemand-Petersson, G.Weyer: Applied Physics Letters, 1988, 53[9], 755-7