Penetration profiles of Zn were recorded, by using the spreading resistance technique, after in-diffusion from the vapor phase at 1262K. The conversion of resistance data to substitutional Zn concentrations was based upon an acceptor level, at Ev + 0.24eV, which was detected by Hall effect measurements of Zn-diffused samples. The diffusion behavior was found to be affected by the condition of the surface. In dislocation-free crystals with damaged surfaces, the profile shape and the Zn incorporation rate indicated a self-interstitial limited diffusivity that depended upon C-2. Together with the much larger diffusion constant in highly dislocated samples, this provided strong evidence for the suggestion that Zn migrated via the kick-out mechanism.

M.Perret, N.A.Stolwijk, L.Cohausz: Journal of Physics - Condensed Matter, 1989, 1[36], 6347-61