Secondary ion mass spectrometric studies of Si-rich layers revealed an decrease in B diffusion, as a function of compressive strain; thus indicating a linear dependence of the activation energy upon strain. It was suggested that the effect arose from structural relaxation of the lattice around the defects which mediated the diffusion. This relaxation was inward for a vacancy and outward for an interstitial.

N.E.B.Cowern, P.C.Zalm, P.Van der Sluis, D.J.Gravesteijn, W.B.De Boer: Physical Review Letters, 1994, 72[16], 2585-8