An investigation was made of B diffusion in Si and in strained SiGe  in situ  doped epitaxial layers. During inert ambient annealing at 860C, B diffusion was observed to be slower in Si0.83Ge0.17 than in Si for B concentrations of between 5 x 1016 and 2.5 x 1019/cm3. Computer simulations of the measured profiles in annealed samples indicated that the effective B diffusivity in Si0.83Ge0.17 was about an order of magnitude lower than that in Si. This disparity increased with increasing B concentration.

P.Kuo, J.L.Hoyt, J.F.Gibbons, J.E.Turner, R.D.Jacowitz, T.I.Kamins: Applied Physics Letters, 1993, 62[6], 612-4