A study was made of the diffusion of B in Si0.7Ge0.3, at temperatures of between 800 and 1050C. It was found that, when the dopant concentration was lower than the intrinsic carrier concentration at the diffusion temperature, the diffusion had a simple Fickian character. The corresponding intrinsic diffusivities had an associated activation energy of 1.79eV for B. The high-concentration B profiles were asymmetrical, with a pronounced shoulder at the near-surface side. These results suggested that the diffusion of this dopant atom in SiGe involved complex couplings with lattice point defects, as for the case of diffusion in pure Si.

D.Mathiot, J.C.Dupuy: Materials Science Forum, 1992, 83-87, 1303-8