A study was made of the migration of P in Si0.7Ge0.3 at temperatures of between 800 and 1050C (table 95). When the P concentration was lower than the intrinsic carrier concentration at the diffusion temperature, the diffusivity exhibited a simple Fick's law behavior. The corresponding intrinsic diffusivity had an associated activation energy of 1.62eV. At high concentrations, the diffusion behavior of P was similar to that which was observed in pure Si; in that the concentration profiles had kinks and tails. It was suggested that the diffusion mechanism was similar in both materials.

D.Mathiot, J.C.Dupuy: Applied Physics Letters, 1991, 59[1], 93-5. See also: Materials Science Forum, 1992, 83-87, 1303-8