Self-interstitial and vacancy concentrations in Si had previously been obtained, as a function of the diffusion time, by analyzing experimental data on the oxidation-enhanced or retarded diffusion of P and Sb. By using these results, and approximate solutions to well-known diffusion equations for self-interstitials and vacancies, self-interstitial and vacancy diffusivities of 2.3 x 10-9 and 2.3 x 10-10cm2/s were determined at 1100C. The thermal equilibrium concentrations of self-interstitials and vacancies were deduced to be 3.4 x 1016 and 2.1 x 1017/cm3, respectively.

Okino, T.: Japanese Journal of Applied Physics 2, 1993, 32[6B], L856-8