Compensated material containing B and a group-V donor was irradiated with 2MeV electrons at 110K. Localized vibrational mode lines at 730 and 757/cm were attributed to interstitial 11B and 10B atoms, respectively. These defects annealed out under second-order kinetics at temperatures of between 200 and 250K, leading to a diffusion behavior of the form:

D(cm2/s) = 0.04 exp[-0.58(eV)/kT]

Centers involving 2 equivalent B atoms were formed and gave localized vibrational mode lines at 903, 912, 928, 599, 613, and 624/cm; corresponding to a defect with axial symmetry. This center annealed out at the slightly higher temperatures of 250 to 300K, to give the previously reported Q center which had one localized vibrational mode line per isotope. At higher temperatures, this defect annealed out, with the formation of nearest-neighbor (B-donor) substitutional pairs.

A.K.Tipping, R.C.Newman: Semiconductor Science and Technology, 1987, 2[7], 389-8