The diffusion behavior of B was used to study point defect kinetics in Si-on-insulator samples. Marker layers of P were used to study oxidation-enhanced diffusion in bulk and bonded and etched-back samples under oxidizing conditions at 750, 800 and 850C. An effective interstitial recombination velocity for the buried Si/SiO2 interface in the etched-back material was extracted by comparing the experimentally obtained P profiles with simulation results. The data could be modelled by assuming a time-independent interface recombination velocity. The same parameter set, but incorporating this deduced recombination velocity, accurately reproduced the implant-enhanced diffusion of B marker layers at 750 and 800C in thin films. This implied that the recombination velocity was independent of the interstitial supersaturation.

S.W.Crowder, C.J.Hsieh, P.B.Griffin, J.D.Plummer: Journal of Applied Physics, 1994, 76[5], 2756-64