The redistribution, during post-growth annealing, of δ-doped Sb with various areal concentrations was investigated by means of secondary ion mass spectrometry. The diffusion profiles depended upon the initial dopant density, and non-Gaussian profiles were obtained; except in the case of the least-doped sample. The doped layers were stable at up to 550C, regardless of the dopant density. In the case of treatment at temperatures that were higher than 700C, the upper limit of the dopant density was found to be 0.01 of a monolayer. It was also found that differences in crystalline quality did not affect the diffusion of Sb between recrystallized and molecular beam epitaxial layers.

S.J.Fukatsu, S.Kubo, Y.Shiraki, R.Ito: Journal of Crystal Growth, 1991, 111[1-4], 843-6