A study was made of E’-like and amorphous Si-like (•SiSi3) spin centers as well as of the well-known E’ center (•SiO3), in low-pressure chemical vapor-deposited films, by using electron spin resonance methods. It was found that an E’-like center was terminated stably by either O or H gas annealing. This E’-like center appeared to be an intermediate defect, but its bonding structure was not known. The amorphous Si-like center was terminated stably by annealing in H at high temperatures. This center was thought to exist in Si clusters in the low-pressure chemical vapor-deposited films. It was also confirmed that the E’ center was terminated stably by annealing in O. It was concluded that both O and H gas annealing were necessary for reducing the numbers of paramagnetic defect centers in the low-pressure chemical vapor-deposited films.

Y.Kamigaki, K.Yokogawa, T.Hashimoto, T.Uemura: Journal of Applied Physics, 1996, 80[6], 3430-4