Direct electron spin resonance evidence was found for substantial intrinsic point defect generation in standard thermal oxides during post-oxidation vacuum annealing. An isotropic signal, with a peak-to-peak width of 4.5 to 5.8G and a g-value of 2.0028 at 4.3K, was attributed to S centers. These had previously been suggested to be E’-like defects (O3Si• with one or two O atoms replaced by Si). It was suggested that this process was related to a well-known oxide degradation which occurred during post-oxidation annealing in an inert ambient. It was noted that the co-production of EX and E’ defects had also been recently reported for thermal oxide.

A.Stesmans, V.V.Afanasev: Applied Physics Letters, 1996, 69[14], 2056-8