It was noted that crystallographically perfect films and crystals could be grown by means of microwave-assisted chemical vapor deposition. The degree of quality of the crystals depended upon the processing parameters. Surface reactions in the presence of atomic H could initiate the formation of twins and stacking faults. These defects disturbed the stacking sequence of the tetrahedra which made up the structure. These disturbances were monitored by using X-ray techniques. Planar and linear disorder were analyzed by means of X-ray diffuse scattering. The diffuse scattering around the (111) reciprocal lattice point could be used as a test for crystallographic perfection.

A.Badzian, T.Badzian: Ceramics International, 1996, 22[3], 223-8