It was noted that the apparent thermal stability of H-passivated Mg acceptors was a function of the annealing ambient that was used, with H2 leading to a reactivation temperature that was some 150C higher than in the case of N2. The dissociation of Mg-H complexes, and the loss of H, were deduced to be sequential processes. Reactivation occurred at temperatures of up to 700C upon annealing under N2, while significant concentrations of H remained in the crystal - even at 900C - in implanted samples. The H was gettered to the regions of highest defect density, such as the InGaN layer in GaN/InGaN double heterostructures.

S.J.Pearton, S.Bendi, K.S.Jones, V.Krishnamoorthy, R.G.Wilson, F.Ren, R.F.Karlicek, R.A.Stall: Applied Physics Letters, 1996, 69[13], 1879-81