Crystals were grown by using the travelling heater method, and electron probe microanalysis showed them to be stoichiometric and homogeneous. Emission peaks in the photoluminescence spectra were attributed to the free exciton and to defects such as Se vacancies, VSe, and Cu antisites, CuIn. Emission intensity data indicated that the non-radiative recombination centers decreased in number in going from the bottom to the top of the crystals, whereas the VSe and CuIn defects remained almost uniform in number. The results indicated that the quality of crystals that were grown by using the travelling heater method was superior to that of crystals which were grown by using the Bridgman method; where non-radiative recombination centers predominated.

M.Yoshimi, Y.Noda: Materials Transactions, 1996, 37[3], 473-7