Sintered mixtures which contained 10wt%SnO2 were heated to 1073 or 1273K under an O pressure of some 50Pa, and the numbers of O atoms which were released was quantitatively determined. The conduction electron densities were determined by means of Hall measurements at room temperature. It was shown that the release of one O atom corresponded to the generation of 2 conduction electrons. On the basis of the crystal structure, it was deduced that the O atom which was released had been at the 16c site, in the Ia3 space group, as an interstitial: Oi"

High-Efficiency Carrier Generation for the Oxygen Release Reaction in Indium Tin Oxide. T.Omata, H.Fujiwara, S.Otsuka-Yao-Matsuo, N.Ono, H.Ikawa: Japanese Journal of Applied Physics - 2, 1998, 37[7B], L879-81