An investigation was made of radiation-induced segregation near to a boundary. Account was taken of the evolution of faulted dislocation loops and network dislocations. The formation of a dislocation-free zone in the vicinity (about 30nm) of a grain boundary was first predicted on the basis of rate theory. Direct observations of the dislocation-free zone were then carried out by means of  in situ  irradiation in a high-voltage electron microscope. As a result, the interrelationship between radiation-induced segregation and heterogeneous clustering near to a grain boundary was considerably clarified.

S.Watanabe, N.Sakaguchi, S.Mochizuki, H.Takahashi: Philosophical Magazine Letters, 1996, 74[5], 351-6