The idea was considered that primary radiation defects were formed in such materials via the excitation of local regions, which contained a certain number of atoms, up to the point that phase transition and re-structuring occurred. The model was used to calculate the threshold atomic-displacement energy for a series of II-VI compounds.

V.I.Panov, A.A.Kharkov: Fizika i Tekhnika Poluprovodnikov, 1996, 30[5], 828-33 (Semiconductors, 1996, 30[5], 444-6)