Monocrystalline Ge1-xSix alloys, where x ranged from 0.004 to 0.022, were grown by using the Czochralski technique. The velocities of dislocations were investigated, using etch-pit techniques, at temperatures ranging from 450 to 700C and under stresses which ranged from 3 to 20MPa. It was found that the dislocation velocity decreased monotonically with increasing Si content (table 2) and, at x = 0.022, reached a value which was about half of that in Ge. The dependence of the dislocation velocity upon stress and temperature could be described by using the same type of empirical relationship that was applicable to other elemental and compound semiconductors.

I.Yonenaga, K.Sumino: Applied Physics Letters, 1996, 69[9], 1264-6

Table 2

Dislocation Velocity Parameters for Ge1-xSix Alloys

V = Vo(/o)m exp[-Q/kT]