Monocrystals were implanted with 60keV 111mCd ions and were annealed under various partial pressures. The occupation of unperturbed lattice sites was monitored by means of perturbed angular correlation spectroscopy. The loss of Cd from the sample was monitored by using tracer diffusion techniques, and the creation of electrically active defects was studied by means of deep-level transient spectroscopy. It was deduced that the implanted Cd atoms occupied substitutional sites immediately after room-temperature implantation, and small deviations from a perfectly crystalline environment disappeared upon annealing at 673K. In the case of Cd-rich (n-type) material, marked out-diffusion of Cd occurred. It was found that none of the observed electrically active deep levels were related to the implantation of Cd.

N.Achtziger, J.Bollmann, T.Licht, B.Reinhold, U.Reislöhner, J.Röhrich, M.Rüb, M.Wienecke, W.Witthuhn, Isolde: Semiconductor Science and Technology, 1996, 11[6], 947-51