The dynamics of D in Zn-doped material were investigated by using anelastic relaxation techniques. It was suggested that the most likely configuration was for D to be trapped by substitutional Zn, although it was also possible that D was trapped at a Ga vacancy. Relaxation of D occurred at about 20K in the kHz range, and had the highest rate which had yet been found for a H isotope in a semiconductor. The shape of the curves of elastic energy loss versus temperature indicated that the D reorientation was strongly quantized.

G.Cannelli, R.Cantelli, F.Cordero, E.Giovine, F.Trequattrini, M.Capizzi, A.Frova: Solid State Communications, 1996, 98[10], 873-7