The in-diffusion of Zn at high concentrations, under As-deficient conditions, caused the generation of dislocation loops, elongated dislocations and Ga precipitates decorated with voids within the diffusion zone. Similar treatment under As vapor led to the recovery of diffusion-induced damage in the sub-surface region. This was accompanied by the appearance of 2 distinct steps in the Zn concentration profile. Previous work had suggested that these phenomena were connected with the out-diffusion of Ga from precipitates and towards the surface. The present results showed that the replacement, by P or Sb, of As in the diffusion ambient produced similar recovery effects.

G.Boesker, H.G.Hettwer, A.Rucki, N.A.Stolwijk, H.Mehrer, W.Jaeger, K.Urban: Materials Chemistry and Physics, 1995, 42[1], 68-71