The electric field-dependence of the emission rates of 2 alpha-particle irradiation-induced electron traps, E3 and E4, in epitaxially grown n-type material, was studied using deep-level transient spectroscopy. It was found that the emission enhancement from E4 was much more pronounced than that from E3, thus emphasizing the difference in their structure. Neither of the 2 defects exhibited an emission enhancement that was characteristic of the Poole-Frenkel effect; which was usually assumed to account for field-dependent emission enhancement. A phonon-assisted tunnelling model accurately described the field-dependent emission enhancement of both the E3 and E4 defects.

W.E.Meyer, F.D.Auret, S.A.Goodman: Japanese Journal of Applied Physics, 1996, 35[2-1A], L1-3