Deep-level transient spectroscopy was used to investigate the defects that were introduced by 5keV He-ion bombardment of epitaxially grown n-type material. It introduced 4 electron traps, EHe1-EHe4; with discrete energy levels that were identical to those of the E1-E4 defects which were introduced by 5.4MeV -particle irradiation of the same material, but were present in different relative concentrations. The EHe3, with a level at Ec-0.35eV, exhibited the same metastability as did E3. Also, low-energy ion bombardment introduced a band of defects, close to the GaAs surface, with a continuous energy distribution.

F.D.Auret, S.A.Goodman: Applied Physics Letters, 1996, 68[23], 3275-7