Rutherford back-scattering spectrometry, X-ray double-crystal diffractometry, reflection electron diffraction and Raman spectroscopic techniques were used to study semi-insulating (100) crystals which had been implanted using a high current-density Ar+ ion beam. The crystal structure of the implanted layers was determined by the fluence and current density of the incident ion beam. A dynamic annealing of radiation defects occurred during implantation. This radiation defect annealing was ion-induced in nature. The residual damage was localized in 2 regions, at depths of about 60 and 110nm. The results were explained in terms of point defect interactions that were due to target heating during irradiation.

A.A.Kutas, T.V.Kovyazina, A.N.Akimov, G.A.Gusakov, F.F.Komarov, A.P.Novikov, L.A.Vlasukova: Materials Science and Engineering B, 1995, 34[1], 32-5