The self-annihilation of antiphase boundaries in epilayers was studied by growing GaAs epitaxially onto a GaAs surface which already contained antiphase boundaries, or by revealing antiphase boundaries by means of layer-by-layer etching. It was found that the self-annihilation of antiphase boundaries occurred via the rearrangement of randomly oriented antiphase boundaries into ordered antiphase boundaries which lay on {011} planes. This was followed by the propagation of antiphase boundaries, along {011} planes which made an angle of 45 with the (001) surface, until they annihilated completely at their intersections.

Y.Li, L.J.Giling: Journal of Crystal Growth, 1996, 163, 203-11