The effect of thermal annealing upon the surfaces of As-implanted material was investigated by using transmission electron microscopic, deep-level transient spectroscopic and temperature-dependent resistance techniques. In annealed films of As-implanted material, As precipitates and a band of deep-level defects with an activation energy of about 0.6eV were observed near to the surface. The mean size and concentration of As precipitates in samples which had been implanted to a dose of 1016/cm2 were 2 to 3nm and 7 x 1016/cm3, respectively. The cross-section of deep-level defects near to the surface was calculated to be 7 x 10-14cm2.

W.C.Chen, G.R.Lin, C.S.Chang: Japanese Journal of Applied Physics, 1996, 35[2-2B], L192-4