The implantation of Ga+, followed by rapid thermal annealing, was used to enhance interdiffusion in single quantum wells. The extent of intermixing was found to depend upon the well depth, the number of implanted ions and the annealing time. Very rapid interdiffusion occurred in the initial annealing stage. The enhanced diffusion coefficient subsequently returned to the non-implanted value. A 2-step model was proposed in order to explain the diffusion process as a function of annealing time. This involved a rapid diffusion process and a saturated diffusion process. The interdiffusion coefficient for the rapid diffusion was found to be well depth-dependent and was estimated to be between 5.4 x 10-16 and 1. 5 x 10-15cm2/s.

N.Sai, B.Zheng, J.Xu, P.Zhang, X.Yang, Z.Xu: Solid State Communications, 1996, 98[12], 1039-42