The effect of controlled O doping, using diethyl aluminum ethoxide, was studied. It was found that such doping led to the incorporation of Al and O, and to the compensation of shallow Si donors in Si-doped Ga1-xInxAs, when x was less than 0.25. For a given diethyl aluminum ethoxide mole fraction, the incorporation of Al and O was independent of x, but the compensation of Si donors decreased with In content. Deep-level transient spectroscopic analyses of a series of O-doped and Si-doped samples of Ga1-xInxAs, where x was less than 0.18, revealed that O incorporation produced deep levels which were similar to those found in diethyl aluminum ethoxide-doped GaAs. As the In content was increased, 1 or more of these deep levels became resonant with the conduction band and led to a high electron concentration in O-doped In0.53Ga0.47As. Photoluminescence emission measurements, at 12K, of the same set of samples revealed a quenching of the near-bandedge peak and the appearance of new O-induced emission features. The diethyl aluminum ethoxide doping of InP also led to the incorporation of Al and O, and to the compensation of Si donors, due to O-induced multiple deep levels.

J.W.Huang, J.M.Ryan, K.L.Bray, T.F.Kuech: Journal of Electronic Materials, 1995, 24[11], 1539-46