Dislocations in the misfit epitaxial film system, of Ga75In25As on (001) GaAs, were imaged by using a modified electron channelling contrast technique in a scanning electron microscope. Images were obtained by using an incident energy of 30keV, a beam divergence of less than 0.001 rad, and a specimen tilt of 70. A scintillation detector was used which had a take-off angle of between 3 and 5. A spatial resolution of some 80 to 100nm was achieved. Such a resolution permitted the rapid imaging of clusters that consisted of only a few closely-spaced dislocations in a 55nm-thick film.

R.R.Keller, J.M.Phelps: Journal of Materials Research, 1996, 11[3], 552-4