The mechanisms which were involved in metalorganic chemical vapor deposition were studied. It was noted that the initial growth mode changed from island-type to layer-type with increasing V/III ratio or gas pressure. The stresses, lattice deformation and defect structures were characterized by varying the GaP thickness. The structures of antiphase domains were determined as a function of the GaP/Si misorientation angle, and the growth conditions which were required in order to obtain a low dislocation-density GaP/Si system with a smooth surface morphology were deduced.

T.Soga, T.Jimbo, M.Umeno: Journal of Crystal Growth, 1996, 163, 165-70